Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Ohmic Contact Mechanism for Ni/C-Faced 4H-n-SiC Substrate

: Kim, Seongjun; Kim, Hong-Ki; Lim, Minwho; Jeong, Seonghoon; Kang, Min-Jae; Kang, Min-Sik; Lee, Nam-Suk; Coung, Tran Viet; Kim, Hyunsoo; Erlbacher, Tobias; Bauer, Anton J.; Shin, Hoon-Kyu

Fulltext ()

Journal of nanomaterials. Online journal 2019 (2019), Art. 5231983, 5 pp.
ISSN: 1687-4110
ISSN: 1687-4129
Journal Article, Electronic Publication
Fraunhofer IISB ()

In this work, the ohmic contact mechanism of Ni electrodes on C-faced 4H-n-SiC was investigated by evaluating the electrical and microstructural properties in the contact interface as a function of annealing temperatures ranging from 950 to 1100°C. We determined that Ni-silicide, especially the NiSi phase, plays a key role in the formation of ohmic contacts rather than an increase in carbon vacancies in the C-faced SiC substrate. A vertically oriented NiSi phase was observed in the thermally annealed sample at the optimized temperature that behaves as a current path. A further increase in annealing temperature leads to the degradation of ohmic behavior due to the formation of horizontal-type NiSi in the Ni-rich Ni-silicide/NiSi/SiC structure.