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BEoL Cracking Risks due to Manufacturing Introduced Residual Stresses

 
: Auersperg, J.; Auerswald, E.; Vogel, D.; Rzepka, S.

:

Institute of Electrical and Electronics Engineers -IEEE-:
20th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2019 : Hannover, Germany 24 – 27 March 2019
Piscataway, NJ: IEEE, 2019
ISBN: 978-1-5386-8041-4
ISBN: 978-1-5386-8040-7
ISBN: 978-1-5386-8039-1
pp.318-320
International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) <20, 2019, Hannover>
English
Conference Paper
Fraunhofer ENAS ()

Abstract
Progressive miniaturization and functional integration in the field of BEoL structures of modern CMOS components call for the use of new materials (porous or nanoparticles filled) in connection with completely new manufacturing technologies. Residual stresses generated in thin layers during several manufacturing processes can lead to delamination and cracking before and because of the stress under CPI (during lead-free reflow soldering and further chip handling, in particular). Challenges for the improvement of thermos-mechanical reliability exist from two sides: the higher thermo-mechanical loads as well as the partly lower damage and fracture resistance of those new materials and interfaces. Therefore, the question of the residual stresses and their influence on the risk of damage and fracture become an important factor. This fact also has an impact on the application of fracture mechanics analysis using simulative numerical methods as a reliable method for process and design optimization [1]. In this paper, the part of residual stresses of different layers for the formation and propagation of cracks in BEoL structures have been investigated by experiment (FIB based residual stress estimation) and simulation (XFEM delivering crack initiation and propagation).

: http://publica.fraunhofer.de/documents/N-569163.html