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220 GHz low-noise amplifier MMICs and modules based on a high performance 50 nm metamorphic HEMT technology

Rauscharme 220 GHz Verstärker-MMICs und -Module auf der Basis einer leistungsstarken metamorphen HEMT-Technologie mit einer Gatelänge von 50nm
: Tessmann, A.; Leuther, A.; Massler, H.; Riessle, M.; Kuri, M.; Zink, M.; Reinert, W.


Physica status solidi. C 4 (2007), No.5, pp.1667-1670
ISSN: 1610-1634
ISSN: 1610-1642
ISSN: 1862-6351
Journal Article
Fraunhofer IAF ()
G-Band; imaging; Bildgebungsverfahren; packaging; Aufbautechnik; MHEMT; low-noise amplifier (LNA); rauscharmer Verstärker; coplanar waveguide; Koplanarleitung; MMIC

A metamorphic composite-channel InAlAs/InGaAs based high electron mobility transistor (MHEMT) technology has been developed for active and passive high-resolution imaging applications. The technology features 50 nm gate length in combination with an In content of 80 % in the main channel and 53 % in the second channel. An extrinsic transit frequency f(ind t) of 400 GHz and an extrinsic maximum transconductance g(ind m,max) of 1800 mS/mm were measured at a drain voltage of 1 V. Based on this advanced MHEMT technology, coplanar G-band low-noise amplifier (LNA) MMICs were realized, achieving a small-signal gain of more than 15 dB between 192 and 230 GHz together with an average noise figure of 8 dB. Furthermore, mounting and packaging of the monolithic amplifier chips into G-band waveguide modules was accomplished with only minor reduction in circuit performance.