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Impact of Al-ion implantation on the formation of deep defects in n-type 4H-SiC

: Weiße, Julietta; Hauck, Martin; Krieger, Michael; Erlekampf, Jürgen; Mitlehner, Heinz; Bauer, Anton J.; Rommel, Mathias; Häublein, Volker; Erlbacher, Tobias; Csato, Constantin; Rüb, Michael; Akhmadaliev, Shavkat; Frey, Lothar


Häublein, Volker ; Institute of Electrical and Electronics Engineers -IEEE-; IEEE Electron Devices Society:
22nd International Conference on Ion Implantation Technology, IIT 2018. Proceedings : 16-21 September 2018, Würzburg, Germany
Piscataway: IEEE, 2018
ISBN: 978-1-5386-6829-0
ISBN: 978-1-5386-6828-3 (Print)
ISBN: 978-1-5386-6827-6
ISBN: 978-1-5386-6830-6
International Conference on Ion Implantation Technology (IIT) <22, 2018, Würzburg>
Deutsche Forschungsgemeinschaft DFG
Conference Paper
Fraunhofer IISB ()
aluminum; high energy ion implantation; energy filter implantation; EFII; defect; compensation; deep level transient spectroscopy; DLTS; hall effect; 4H-SiC

In this work, deep defects in an aluminum implanted 4H-SiC n-type epitaxy are discussed in dependence on following influencing factors: concentration of implanted aluminum, implantation energy, implantation at 500°C and at room temperature, as well as ascending or descending order of implantation energies during ion implantation using Gaussian profiles. The compensation ratio, which reaches values up to 90% of the implanted aluminum concentration, is determined by Hall Effect measurements. Compensating defect centers (Z1/2-, ONx-defects) are detected by Deep Level Transient Spectroscopy after high energy ion implantation using an energy filter, followed by an annealing and an oxidation process.