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Native Oxide Barrier Layer for Selective Electroplated Metallization of Silicon Heterojunction Solar Cells

: Hatt, Thibaud; Kluska, Sven; Yamin, Mananchaya; Bartsch, Jonas; Glatthaar, Markus

Postprint urn:nbn:de:0011-n-5655151 (1.0 MByte PDF)
MD5 Fingerprint: aa082ee1c11294d8bf8127a256a9a871
Created on: 20.3.2020

Solar RRL 3 (2019), No.6, Art. 1900006, 7 pp.
ISSN: 2367-198X
Bundesministerium fur Wirtschaft und Energie BMWi (Deutschland)
0324125; PV-BAT400
PV-BAsis Technologie für hocheffiziente Module mit 400W Leistung und einer Leistungsdichte von 240 W/m²
Journal Article, Electronic Publication
Fraunhofer ISE ()
elektrochemischer Prozess; Photovoltaik; Silicium-Photovoltaik; Kontaktierung und Strukturierung

The metallization of silicon heterojunction (SHJ) solar cells by electroplating of highly conductive copper onto a multifunctional patterned metal layer stack is demonstrated. The approach features several advantages: low temperature processing, high metal conductivity of plated copper, no organic making, and low material costs (almost Ag‐free). A PVD layer stack of copper and aluminum is deposited onto the cell subsequently to TCO deposition. The aluminum layer is patterned with a printed etchant and its native oxide on the remaining areas inhibits plating. The full area aluminum layer while electroplating supports plating current distribution and allows homogeneous plating height distributions over the cell. The NOBLE (native oxide barrier layer for selective electroplating) approach allows reaching a first encouraging SHJ solar cell efficiency of 20.2% with low contact resistivity.