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  4. Native Oxide Barrier Layer for Selective Electroplated Metallization of Silicon Heterojunction Solar Cells
 
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2019
Journal Article
Title

Native Oxide Barrier Layer for Selective Electroplated Metallization of Silicon Heterojunction Solar Cells

Abstract
The metallization of silicon heterojunction (SHJ) solar cells by electroplating of highly conductive copper onto a multifunctional patterned metal layer stack is demonstrated. The approach features several advantages: low temperature processing, high metal conductivity of plated copper, no organic making, and low material costs (almost Ag‐free). A PVD layer stack of copper and aluminum is deposited onto the cell subsequently to TCO deposition. The aluminum layer is patterned with a printed etchant and its native oxide on the remaining areas inhibits plating. The full area aluminum layer while electroplating supports plating current distribution and allows homogeneous plating height distributions over the cell. The NOBLE (native oxide barrier layer for selective electroplating) approach allows reaching a first encouraging SHJ solar cell efficiency of 20.2% with low contact resistivity.
Author(s)
Hatt, Thibaud  
Fraunhofer-Institut für Solare Energiesysteme ISE  
Kluska, Sven  
Fraunhofer-Institut für Solare Energiesysteme ISE  
Yamin, Mananchaya
Fraunhofer-Institut für Solare Energiesysteme ISE  
Bartsch, Jonas  
Fraunhofer-Institut für Solare Energiesysteme ISE  
Glatthaar, Markus  
Fraunhofer-Institut für Solare Energiesysteme ISE  
Journal
Solar RRL  
Project(s)
PV-BAT400
Funder
Bundesministerium für Wirtschaft und Energie BMWi (Deutschland)  
Open Access
File(s)
Download (1.09 MB)
DOI
10.24406/publica-r-260163
10.1002/solr.201900006
Language
English
Fraunhofer-Institut für Solare Energiesysteme ISE  
Keyword(s)
  • elektrochemischer Prozess

  • Photovoltaik

  • Silicium-Photovoltaik

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