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Accurate extraction of maximum current densities from the layout

: Seidl, A.; Schnattinger, T.; Erdmann, A.; Hartmann, H.; Petrashenko, A.


Kosina, H.:
Special Issue on the Proceedings of the International Workshop on Computational Electronics, IWCE 2006. Special section. Pt.1 : Held at the Vienna University of Technology (TU Wien) on May 25 - 27, 2006
Secaucus, NJ: Springer, 2006 (Journal of computational electronics 5.2006, Nr.4)
ISSN: 1569-8025
International Workshop on Computational Electronics (IWCE) <11, 2006, Wien>
Conference Paper, Journal Article
Fraunhofer IISB ()
lithography simulation; device simulation; element free Galerkin; Dr.LiTHO

A module for efficient extraction of maximum current densities from the layout has been developed and implemented within the CAD package PARIS. The corner-rounding dependence on technology parameters, such as numerical aperture and acid/base diffusion length, was simulated. A combination of classical and meshless FEM was used to obtain accurate results taking the simulated realistic shapes of the corners into account.