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Industrial photoresist development with the EUV laboratory exposure tool. Mask fabrication, sensitivity and contrast

: Brose, Sascha; Danylyuk, Serhiy; Grüneberger, Franziska; Gerngroß, Maik; Stollenwerk, Jochen; Schirmer, Matthias; Loosen, Peter


Itani, T. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
International Conference on Extreme Ultraviolet Lithography 2019 : 15-19 September 2019, Monterey, California
Bellingham, WA: SPIE, 2019 (Proceedings of SPIE 11147)
Paper 111471I, 9 pp.
International Conference on Extreme Ultraviolet Lithography <2019, Monterey/Calif.>
Conference Paper
Fraunhofer ILT ()
lithography; EUV

Main application of the EUV laboratory exposure tool (EUV-LET) is the large-area patterning (cm²) of periodic nanostructures with half-pitches below 100 nm. Applications are found in various research fields (e.g. diffractive optical elements, anti-reflective coatings, artificial crystals, nanowires, biosensors) as well as in prototype development and small-batch production. Recently the working wavelength of the tool was changed from 10.9 nm to 13.5 nm in order to enable industrial photoresist development and resist characterization. In collaboration with the resist supplier All resist GmbH we demonstrate how EUV photoresists can be effectively developed using a compact laboratory setup for rapid characterization of different resist formulations and development conditions. The collaboration provides a platform for identifying the needs of the industry and proves that the EUV-LET in research configuration can fulfill this challenging task. First part of this contribution focuses on the fabrication of multi-field resolution test masks. The extension of the developed phase-shifting mask fabrication process to line structures leads to several technological challenges that will be pointed out. Furthermore we present first contrast and sensitivity investigations for several resist formulations that will serve as a basis for upcoming resolution tests.