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Examples of High-speed Harmonic Load Pull Investigations of High-Efficiency GaN Power Transistors

: Marchetti, M.; Maier, T.; Carrubba, V.; Maroldt, S.; Mußer, M.; Quay, R.


Institute of Electrical and Electronics Engineers -IEEE-:
IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2015. Proceedings : Tel Aviv, Israel, 2 - 4 November 2015
Piscataway, NJ: IEEE, 2015
ISBN: 978-1-4799-7473-3
4 pp.
International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS) <2015, Tel Aviv>
Conference Paper
Fraunhofer IAF ()

This paper presents the capability of an advanced and high-speed, mixed-signal active harmonic load-pull system through measurement activity on AlGaN/GaN transistors. The advantages of the GaN technology which can provide a high power density and a high efficiency are best exploited when the optimum fundamental and harmonic terminations are provided to the transistor. The ultra-high speed of the system, together with its capability to control up to three harmonic impedances, can be used to search for the optimum terminations in a fast and effective manner. This has led to max drain efficiency as high as 90% at 2 GHz, while delivering at the same time 3.5 W of output power for a 1.2 mm device gate width. Further X-band analysis by using the same load-pull system, yields PAE >65 % over the entire wafer.