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DSMC - simulation of the influence of hydrogen addition on the properties of silicon deposited by HWCVD

: King, H.; Pflug, A.; Ortner, K.; Höfer, M.; Harig, T.; Sittinger, V.


Surface and coatings technology 379 (2019), Art. 125035, 6 pp.
ISSN: 0257-8972
Journal Article
Fraunhofer IST ()
hot wire chemical vapor deposition (HWCVD); simulation; optimization; DSMC; raman spectroscopy; mass-spectroscopy

The gas phase chemistry in a hot-wire chemical vapor deposition (HWCVD) process, which utilizes an array of heated tungsten wires is analyzed via Direct Simulation Monte Carlo simulation. Process gases are silane (SiH₄) and hydrogen (H₂). SiₓHy radical partial pressures are simulated as a function of H₂ gas flow for given gas inlet compositions in order to optimize radical partial pressures, leading to higher quality and more ordered Si:H films. The simulation results are compared with a series of deposition runs using an array of 10 heated tungsten wires (600 mm long, 0.53 mm diameter, held at 2100 °C) providing a deposition area of 500 x 600 mm². H₂ gas flows are varied to maximize the crystallinity of Si:H films as measured through Raman spectroscopy. The experimental sets are further compared to the simulation results by means of in-situ mass spectrometry, film thickness measurement, and process pressure measurement.