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Dose Dependent Profile Deviation of Implanted Aluminum in 4H-SiC During High Temperature Annealing

 
: Kocher, Matthias; Rommel, Mathias; Sledziewski, Tomasz; Häublein, Volker; Bauer, Anton J.

:

Häublein, Volker ; Institute of Electrical and Electronics Engineers -IEEE-; IEEE Electron Devices Society:
22nd International Conference on Ion Implantation Technology, IIT 2018. Proceedings : 16-21 September 2018, Würzburg, Germany
Piscataway: IEEE, 2018
ISBN: 978-1-5386-6829-0
ISBN: 978-1-5386-6828-3 (Print)
ISBN: 978-1-5386-6827-6
ISBN: 978-1-5386-6830-6
pp.58-61
International Conference on Ion Implantation Technology (IIT) <22, 2018, Würzburg>
English
Conference Paper
Fraunhofer IISB ()

Abstract
The influence of the high temperature annealing on differently implanted Al profiles was investigated by SIMS measurements. Depending on the implanted dose and also depending on the local concentration a significant diffusion of the implanted Al was observed. Based on this results at least two necessary conditions of Al diffusion during high temperature annealing could be determined.

: http://publica.fraunhofer.de/documents/N-559061.html