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One-step transfer printing of patterned nanogap electrodes

: Saller, K.B.; Riedl, H.; Lugli, P.; Koblmüller, G.; Tornow, M.


Journal of vacuum science and technology B. Microelectronics and nanometer structures 37 (2019), No.4, Art. 040602
ISSN: 0734-211X
ISSN: 1071-1023
ISSN: 2166-2746
ISSN: 2166-2754
Journal Article
Fraunhofer EMFT ()

Direct printing of nanogap-separated metallic contact pairs is described that enables novel nanoelectronic device architectures. Nanotransfer printing (nTP) stamps are grown by molecular beam epitaxy involving layered III-V semiconductors that are selectively etched. Finished stamps comprise both the nanoscale surface trench that becomes the nanogap on printing and a microscale, predetermined geometry that affords the simultaneous integration of contact pads for external electrical testing. This nTP technique is well suited for top-contacting sensitive thin films for electrical characterization; a typical electrode configuration is illustrated by transfer-printed 13 nm thin metal films that are separated by an electrically insulating gap of ca. 30 nm.