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P-Type Silicon Solar Cells with Passivating Rear Contact Formed by LPCVD p+ Polysilicon and Screen Printed Ag Metallization

: Mack, S.; Lenes, M.; Luchies, J.-M.; Wolf, A.


Physica status solidi. Rapid research letters 13 (2019), No.7, Art. 1900064, 4 pp.
ISSN: 1862-6254
ISSN: 1862-6270
Journal Article
Fraunhofer ISE ()
Photovoltaik; Silicium-Photovoltaik; Oberflächen: Konditionierung; Passivierung; Lichteinfang; Kontaktierung und Strukturierung; Pilotherstellung von industrienahen Solarzellen; TOPCon; contacts; LPCVD; polysilicon; printing

The work shows a process flow for the fabrication of bifacial 244 cm2 large p‐type solar cells with a passivating rear contact formed by low pressure chemical vapor deposition of an in‐situ boron doped polysilicon layer. Contacting of both polarities is achieved by screen printing of a silver paste and contact firing. Contact resistance values are shown to heavily depend on firing set temperatures. In a first experiment, conversion efficiencies up to 20.4% are demonstrated.