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Establishing the "native oxide barrier layer for selective electroplated" metallization for bifacial silicon heterojunction solar cells

 
: Hatt, Thibaud; Bartsch, Jonas; Kluska, Sven; Glatthaar, Markus

:
Postprint urn:nbn:de:0011-n-5557658 (1.4 MByte PDF)
MD5 Fingerprint: 45a13155e26f01f398ef55e60bf2d614
Copyright AIP
Created on: 4.9.2019


Poortmans, J. ; American Institute of Physics -AIP-, New York:
SiliconPV 2019, the 9th International Conference on Crystalline Silicon Photovoltaics : 8-10 April 2019, Leuven, Belgium
New York, N.Y.: AIP Press, 2019 (AIP Conference Proceedings 2147)
ISBN: 978-0-7354-1892-9
Art. 040005, 6 pp.
International Conference on Crystalline Silicon Photovoltaics (SiliconPV) <9, 2019, Leuven>
European Commission EC
H2020-Low-cost, low-carbon energy supply - Developing the next generation technologies of renewable electricity and heating/cooling; 727529; DISC
Double side contacted cells with innovative carrier-selective contacts
Bundesministerium fur Wirtschaft und Energie BMWi (Deutschland)
0324145; PV-BAT400
PV-BAsisTechnologie für Hocheffiziente Module mit 400W Leistung und einer Leistungsdichte von 240 W/m²
English
Conference Paper, Electronic Publication
Fraunhofer ISE ()
Plating; silicon hetero junction solar cell; TCOs

Abstract
The metallization of silicon heterojunction (SHJ) solar cells by selective Cu electroplating onto a structured PVD Cu-Al seed and mask layer stack is established by using the native oxide of the Al as insulating barrier. The NOBLE metallization (native oxide barrier layer for selective electroplating) allows reaching a first promising efficiency of 20.0% on full area SHJ solar cell with low contact resistivity on ITO. The approach features several advantages: low temperature processing, high metal conductivity of plated copper, no organic making and low material costs (almost Ag-free).

: http://publica.fraunhofer.de/documents/N-555765.html