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Decoration of Al Implantation Profiles in 4H-SiC by Bevel Grinding and Dry Oxidation

: Kocher, Matthias; Erlbacher, Tobias; Rommel, Mathias; Bauer, Anton J.


Gammon, Peter M.:
Silicon Carbide and Related Materials 2018 : Selected papers from the 12th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), held in Birmingham, UK, in September 2018
Durnten-Zurich: TTP, 2019 (Materials Science Forum 963)
ISBN: 978-3-0357-1332-9
ISBN: 978-3-0357-2332-8
ISBN: 978-3-0357-3332-7
European Conference on Silicon Carbide and Related Materials (ECSCRM) <12, 2018, Birmingham>
Conference Paper
Fraunhofer IISB ()
implantation; oxidation; decoration

The possibility to analyze micrometer scaled 2D implantation profiles is essential for improving SiC power devices. Due to the fact that the oxidation rate depends on the doping concentration a rather simple method was developed in order to decorate highly doped (aluminum) implantation profiles. For this purpose, different samples were grinded with a shallow bevel angle and subsequently oxidized. It could be shown that this method allows analyzing the implantation depth of different box-shape implanted samples. Furthermore the ability to distinguish micrometer scaled 2D profiles for a state-of-the-art SiC power device could be shown.