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Multi-wafer MBE grown InP-based DHBTs for millimeterwave and digital applications

Multi-wafer MBE gewachsenen InP-DHBTs für Millimeterwellen- und digitale Anwendungen
: Driad, R.; Lösch, R.; Schneider, K.; Makon, R.E.; Ludwig, M.; Weimann, G.


Physica status solidi. C 3 (2006), No.3, pp.456-460
ISSN: 1610-1634
ISSN: 1610-1642
ISSN: 1862-6351
Journal Article
Fraunhofer IAF ()
III-V semiconductor; molecular beam epitaxy; microwave integrated electronic; semiconductor device; bipolar transistor; microelectronic; III-V Halbleiter; molekulare Strahlepitaxie; integrierte Mikrowellenschaltung; Bipolartransistor; Mikroelektron

In this paper, we report the development and performance of a complete InP-based DHBT manufacturable technology from materials growth to device and integrated circuits realizations. The InGaAs/InP DHBTs were grown in a multi-wafer solid phosphorus MBE system. High frequency devices with an effective emitter area of 4.8 µm2 exhibited peak f(ind T) and f(ind MAX) values of 250 and 270 GHz, respectively, at a collector current density of about 4 mA/µm2. Using this technology, distributed amplifiers and low power consumption selectors, have been successfully fabricated and tested above 80 Gbit/s.