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Channeling in 4H-SiC from an Application Point of View

Channeling in 4H-SiC aus der Anwendungssicht
: Pichler, Peter; Sledziewski, Tomasz; Häublein, Volker; Bauer, Anton J.; Erlbacher, Tobias


Gammon, Peter M.:
Silicon Carbide and Related Materials 2018 : Selected papers from the 12th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), held in Birmingham, UK, in September 2018
Durnten-Zurich: TTP, 2019 (Materials Science Forum 963)
ISBN: 978-3-0357-1332-9
ISBN: 978-3-0357-2332-8
ISBN: 978-3-0357-3332-7
European Conference on Silicon Carbide and Related Materials (ECSCRM) <12, 2018, Birmingham>
Deutsche Forschungsgemeinschaft DFG
Ladungskompensation in 4H-Siliciumkarbid - Simulation, Modellbildung und experimentelle Verifizierung
Conference Paper
Fraunhofer IISB ()
aluminum; channeling; ion implantation; nitrogen; silicon carbide

During ion implantation into monocrystalline semiconductors, some of the implanted atoms will be deflected to crystal directions along which they may penetrate deeply into the crystal. We investigate such channeling effects for Al and N implantation into 4H-SiC by Monte Carlo simulations. The focus of the work is on the effects of channeling on doping profiles, the relevance for the net doping of typical power electronic devices, and the influence of scattering oxides.