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Comparison between Ni-SALICIDE and Self-Aligned Lift-Off Used in Fabrication of Ohmic Contacts for SiC Power MOSFET

: Sledziewski, Tomasz; Erlbacher, Tobias; Bauer, Anton J.; Frey, Lothar; Chen, Ximing; Zhao, Yanli; Li, Chengzhan; Dai, Xiaoping


Gammon, Peter M.:
Silicon Carbide and Related Materials 2018 : Selected papers from the 12th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), held in Birmingham, UK, in September 2018
Durnten-Zurich: TTP, 2019 (Materials Science Forum 963)
ISBN: 978-3-0357-1332-9
ISBN: 978-3-0357-2332-8
ISBN: 978-3-0357-3332-7
European Conference on Silicon Carbide and Related Materials (ECSCRM) <12, 2018, Birmingham>
Conference Paper
Fraunhofer IISB ()
4H-SiC; MOSFET; ohmic contact; Nickel Silicide; self-alignment; Salicide

A comparison between self-aligned process (using lift-off) and Ni-SALICIDE (nickel self-aligned silicide) used in fabrication of ohmic contacts for SiC Power MOSFET is done. Both processes are demonstrated for 3.3 kV SiC VDMOS transistors fabricated on 100 mm substrates. It is shown that the Ni-SALICIDE process with first silicidation at 500 °C does not degrade the electrical properties of silicon dioxide; particularly, a degradation of the interlayer dielectric between source and gate is not evident. Additionally, this first silicidation is found to have a positive impact on the specific resistance of contacts formed on p-type SiC using NiAl2.6% as an ohmic metal (ρc ≈ 400 μΩcm2).