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On the Origin of Charge Compensation in Aluminum-Implanted n-Type 4H-SiC by Analysis of Hall Effect Measurements

: Weisse, Julietta; Hauck, Martin; Sledziewski, Tomasz; Krieger, Michael; Bauer, Anton J.; Mitlehner, Heinz; Frey, Lothar; Erlbacher, Tobias


Gammon, Peter M.:
Silicon Carbide and Related Materials 2018 : Selected papers from the 12th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), held in Birmingham, UK, in September 2018
Durnten-Zurich: TTP, 2019 (Materials Science Forum 963)
ISBN: 978-3-0357-1332-9
ISBN: 978-3-0357-2332-8
ISBN: 978-3-0357-3332-7
European Conference on Silicon Carbide and Related Materials (ECSCRM) <12, 2018, Birmingham>
Conference Paper
Fraunhofer IISB ()
hall effect; compensation; activation; ionization energy; aluminum implantation; high temperature implantation

Aluminum implanted 4H-SiC often shows an unexpected increase of the free hole density at elevated temperatures in Hall Effect measurements. Here, we exhibit that this phenomenon cannot solely be traced down to the Hall scattering factor and the presence of excited acceptor states. It is necessary to assume an additional defect center in the lower half of the band gap with ionization energies higher than that of aluminum to explain this behavior. Therefore, we investigated ionimplanted square van-der-Pauw samples with Hall Effect and complementary SIMS measurements. An analysis of the data using the neutrality equation reveals compensation ratios of 20 % to 90 %, depending on the aluminum concentration and the concentration of the deep defect center of up to 50 % of the doping.