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Consistent modelling of I-V and C-V behaviour of GaN HEMTs in presence of trapping

: Hodges, Jason; Schwantuschke, Dirk; Raay, Friedbert van; Brueckner, Peter; Quay, Rüdiger; Khandelwal, Sourabh


Institute of Electrical and Electronics Engineers -IEEE-:
IEEE MTT-S International Microwave Symposium, IMS 2019 : 2-7 June 2019, Boston, Massachusetts
Piscataway, NJ: IEEE, 2019
ISBN: 978-1-7281-1309-8
ISBN: 978-1-7281-1310-4
International Microwave Symposium (IMS) <2019, Boston/Mass.>
Conference Paper
Fraunhofer IAF ()
gallium nitride (GaN); high electron mobility transistor (HEMT); charge trapping; pulsed I-V; pulsed S-parameter

Charge trapping in Gallium Nitride (GaN) based high electron mobility transistors (HEMTs) is known to change the I-V behaviour of these devices. Trapping also changes the C-V behaviour of the device. In this paper, for the first time, we present a physics-based compact model which captures the I-V and the C-V characteristics of the device in presence of trapping effects consistently with I-V and C-V modelled using the same set of model formulations and physical model parameters. The developed model shows excellent agreement to the measured data. The importance of a consistent I-V and C-V model is also shown.