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Design, analysis and evaluation of a broadband high-power amplifier for Ka-band frequencies

: Neininger, Philipp; John, Laurenz; Brueckner, Peter; Friesicke, Christian; Quay, Rüdiger; Zwick, Thomas


Institute of Electrical and Electronics Engineers -IEEE-:
IEEE MTT-S International Microwave Symposium, IMS 2019 : 2-7 June 2019, Boston, Massachusetts
Piscataway, NJ: IEEE, 2019
ISBN: 978-1-7281-1309-8
ISBN: 978-1-7281-1310-4
International Microwave Symposium (IMS) <2019, Boston/Mass.>
Conference Paper
Fraunhofer IAF ()
high power amplifiers; broadband amplifier; gallium nitride; Ka-Band; 5G mobile communication

This paper reports on the analysis, development and results of a wideband High Power Amplifier (HPA) covering a large segment of the Ka-Band. The presented circuit has been manufactured in a GaN-on-SiC process with a gate length of 100 nm with three different process variants. It reaches a linear gain of well over 22 dB and an output power between 6 and 9 W in the band of 26 to 35 GHz, which equals a fractional bandwidth of over 29 %, while also maintaining a state-of-the-art power-added efficiency. To the best of the authors’ knowledge, this is the most broadband HPA over 7 W published in this frequency band.