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A New Perspective on Potential-Induced Degradation of the Shunting Type by Micro Raman-Spectroscopy and Micro Light-Beam-Induced Current

 
: Büchler, A.; Nagel, H.; Breitwieser, M.; Kluska, S.; Heinz, F.D.; Schubert, M.C.; Glatthaar, M.; Glunz, S.W.

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Institute of Electrical and Electronics Engineers -IEEE-:
Get energized with solar power. 44th IEEE Photovoltaic Specialists Conference : Washington, DC, June 25-30, 2017
Piscataway, NJ: IEEE, 2017
ISBN: 978-1-5090-5605-7
ISBN: 978-1-5090-5606-4
pp.3135-3138
Photovoltaic Specialists Conference (PVSC) <44, 2017, Washington/DC>
English
Conference Paper
Fraunhofer ISE ()
Hocheffiziente Siliciumsolarzellen und neuartige Prozesse; Solarzellen - Entwicklung und Charakterisierung; Photovoltaik; Silicium-Photovoltaik; Charakterisierung von Prozess- und Silicium-Materialien; Mikrocharacterisierung; µLBIC; PID-S; Spektroskopie

Abstract
Solar cells showing shunts due to potential-induced degradation (PID-s) were investigated by combining electron-beam induced current (EBIC), microscopic light beam induced current (μLBIC) and microscopic Raman spectroscopy (μRS) at the same positions with high local resolution. A direct correlation of compressive stress measured by μRS and local shunting as observed by μLBIC was found. Comparing μRS mappings before and after degradation proves that stress is induced locally by PID-s which can be explained by the formation of sodium decorated stacking faults.

: http://publica.fraunhofer.de/documents/N-549557.html