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Principles and Challenges for Binary Oxide Based Ferroelectric Memory FeFET

Poster presented at IEEE International Memory Workshop, IMW 2019, 12-15 May 2019, Monterey, California
: Ali, T.; Polakowski, P.; Büttner, T.; Kämpfe, T.; Rudolph, M.; Pätzold, B.; Hoffmann, R.; Czernohorsky, M.; Kühnel, K.; Steinke, P.; Eng, L.M.; Seidel, K.

2019, 1 Folie
International Memory Workshop (IMW) <11, 2019, Monterey/Calif.>
Fraunhofer IPMS ()
Anfrage beim Institut / Available on request from the institute

In this paper, we give a perspective and recent overview of the emerging memory FeFET by shading the light on different aspects of the memory operation. The key fundamental questions related to material development, device scalability effects, utilization as multi-bit storage, write conditions, and memory endurance capability are overviewed based on experimental results of the MFIS based FeFET. The opportunities and challenges for the FeFET memory are discussed with emphasis on the fundamental principles and dependencies shaping its development.