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Principles and Challenges for Binary Oxide Based Ferroelectric Memory FeFET

: Ali, T.; Polakowski, P.; Büttner, T.; Kämpfe, T.; Rudolph, M.; Pätzold, B.; Hoffmann, R.; Czernohorsky, M.; Kühnel, K.; Steinke, P.; Eng, L.M.; Seidel, K.


Institute of Electrical and Electronics Engineers -IEEE-:
IEEE 11th International Memory Workshop, IMW 2019 : 12-15 May 2019, Monterey, California
Piscataway, NJ: IEEE, 2019
ISBN: 978-1-7281-0982-4
ISBN: 978-1-7281-0981-7
ISBN: 978-1-7281-0980-0
International Memory Workshop (IMW) <11, 2019, Monterey/Calif.>
Conference Paper
Fraunhofer IPMS ()

In this paper, we give a perspective and recent overview of the emerging memory FeFET by shading the light on different aspects of the memory operation. The key fundamental questions related to material development, device scalability effects, utilization as multi-bit storage, write conditions, and memory endurance capability are overviewed based on experimental results of the MFIS based FeFET. The opportunities and challenges for the FeFET memory are discussed with emphasis on the fundamental principles and dependencies shaping its development.