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Simulations on Laser-Phosphorous-Doped Selective Emitters

 
: Weber, J.; Lohmüller, S.; Lohmüller, E.; Wasmer, S.; Nekarda, J.; Brand, A.A.

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Institute of Electrical and Electronics Engineers -IEEE-:
IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 : A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC, 10-15 June 2018, Waikoloa Village, HI, USA
Piscataway, NJ: IEEE, 2018
ISBN: 978-1-5386-8529-7
ISBN: 978-1-5386-8530-3
pp.3588-3592
World Conference on Photovoltaic Energy Conversion (WCPEC) <7, 2018, Waikoloa/Hawaii>
Photovoltaic Specialists Conference (PVSC) <45, 2018, Waikoloa/Hawaii>
Photovoltaic Science and Engineering Conference (PVSEC) <28, 2018, Waikoloa/Hawaii>
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <34, 2018, Waikoloa/Hawaii>
English
Conference Paper
Fraunhofer ISE ()
Photovoltaik; Silicium-Photovoltaik; Dotierung und Diffusion; Kontaktierung und Strukturierung; Pilotherstellung von industrienahen Solarzellen; selective emitter (LDSE); rear and emitter solar cell (PERC); simulations; doping profile

Abstract
Simulation results concerning laser-doped selective emitters (LDSE) for the phosphorous doped front side of passivated emitter and rear solar cells are presented. We introduce a formula for different emitter doping profiles to study the influence on the dark saturation current density at the emitter-metal interface j 0e,met . It is shown that j 0e,met can be reduced by deep and heavily-doped LDSEs. In addition, we report on how energy conversion efficiency can be predicted accounting for potential misalignment between LDSE and contact structures. As a result, we recommend avoiding the occurrence of non-laser-doped metallized areas. According to our simulation, energy conversion efficiency is increased by about 0.5%abs to 21.8% by implementing the LDSE.

: http://publica.fraunhofer.de/documents/N-548703.html