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Selective Emitter Using APCVD PSG Layer as Doping Source

: Saint-Cast, P.; Belledin, U.; Lohmüller, E.; Kafle, B.; Weber, J.; Seren, S.; Lohmüller, S.; Wolf, A.; Hofmann, M.

Fulltext urn:nbn:de:0011-n-5486084 (648 KByte PDF)
MD5 Fingerprint: f8b72cfd4023557ec4aa240b1824936d
Created on: 19.6.2019

Verlinden, P. ; WIP - Renewable Energies, München:
35th European Photovoltaic Solar Energy Conference and Exhibition 2018 : Proceedings of the international conference held in Brussels, Belgium, 24 September-28 September 2018; DVD-ROM
München: WIP, 2018
ISBN: 978-3-936338-50-8
ISBN: 3-936338-50-7
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <35, 2018, Brussels>
Conference Paper, Electronic Publication
Fraunhofer ISE ()
Plasmatechnologie; Photovoltaik; Silicium-Photovoltaik; Oberflächen: Konditionierung; Passivierung; Lichteinfang; Emitter; APCVD; Laser

Using atmospheric pressure chemical vapour deposition (APCVD) of phosphosilicate glass (PSG) allows the separation of the PSG deposition and the thermal drive-in, adding another degree of freedom and control to the emitter formation. A large survey is carried out varying the process parameters such as phosphorus concentration and layer thickness of the PSG layer and the temperature and duration of the thermal drive-in in a tube furnace. We show that the data of the survey can train a metamodel, which can predict the emitter sheet resistances Rsh based on the process parameters. An emitter with Rsh = 120 /sq and an emitter dark saturation current density j0e = 40 fA/cm² after firing (textured surface, SiNX passivation) is demonstrated using this approach. For the formation of a selective emitter, laser diffusion is carried out. The laser process takes place between the PSG layer deposition and the drive-in process. A 1.4 μm deep profile with a peak concentration of 7×1019 cm-3 at the surface is fabricated using a longpulse infrared laser. This process leads to a specific contact resistivity C = 4.2 mcm² using a commercially available screen-printed and fired silver paste. Specific contact resistivity down to C = 1 mcm² is reached using a short-pulse green laser process.