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Emitter Formation and Passivation Dependence on Crystal Grain Orientations after Atmospheric Pressure Dry Nanotexturing

 
: Ridoy, A.I.; Kafle, B.; Saint-Cast, P.; Lohmüller, S.; Norouzi, M.H.; Clochard, L.; Duffy, E.; Hofmann, M.; Rentsch, J.; Preu, R.

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Verlinden, P. ; WIP - Renewable Energies, München:
35th European Photovoltaic Solar Energy Conference and Exhibition 2018 : Proceedings of the international conference held in Brussels, Belgium, 24 September-28 September 2018; DVD-ROM
München: WIP, 2018
ISBN: 978-3-936338-50-8
ISBN: 3-936338-50-7
pp.606-609
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <35, 2018, Brussels>
English
Conference Paper
Fraunhofer ISE ()
Plasmatechnologie; Photovoltaik; Silicium-Photovoltaik; Oberflächen: Konditionierung; Passivierung; Lichteinfang; dry etching; silicon; grain orientation; nanotexturing; performance

Abstract
In this work, we investigate the emitter performance of the multicrystalline silicon (mc-Si) solar cell as a function of the crystallographic orientation of the grains and the associated texturing level. Here, we applied a plasma-less nanotexturing process by atmospheric pressure dry etching that enables low reflectivity, followed by a short anisotropic alkaline etch. It is seen in our investigation that grains with lower reflection exhibit lower emitter sheet resistance (Rsh ≈ 72 Ω/sq.) than that of grains with higher reflection (Rsh ≈ 79 Ω/sq.). We show that with our current etching process flow, there is a linear correlation between charge carrier lifetime and weighted surface reflection of different grains in a mc-Si wafer.

: http://publica.fraunhofer.de/documents/N-548605.html