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2018
Conference Paper
Titel
Emitter Formation and Passivation Dependence on Crystal Grain Orientations after Atmospheric Pressure Dry Nanotexturing
Abstract
In this work, we investigate the emitter performance of the multicrystalline silicon (mc-Si) solar cell as a function of the crystallographic orientation of the grains and the associated texturing level. Here, we applied a plasma-less nanotexturing process by atmospheric pressure dry etching that enables low reflectivity, followed by a short anisotropic alkaline etch. It is seen in our investigation that grains with lower reflection exhibit lower emitter sheet resistance (Rsh ≈ 72 O/sq.) than that of grains with higher reflection (Rsh ≈ 79 O/sq.). We show that with our current etching process flow, there is a linear correlation between charge carrier lifetime and weighted surface reflection of different grains in a mc-Si wafer.
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