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Pattern Effects with the Mask Off

Oberflächenstruktureffekte ohne Maske
: Nenyei, Z.; Niess, J.; Lerch, W.; Dietl, W.; Timans, P.J.; Pichler, P.


Institute of Electrical and Electronics Engineers -IEEE-:
14th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2006 : October 10 - 13, 2006 Brighton Hotel, Kyoto, Japan
New York, NY: IEEE, 2006
ISBN: 1-4244-0648-X
International Conference on Advanced Thermal Processing of Semiconductors (RTP) <14, 2006, Kyoto>
Conference Paper
Fraunhofer IISB ()
Struktureffekt; Ausheilung; diffusion; simulation; Bor; silicium

Pattern effects during RTP have been extensively studied for the last 15 years, but have only recently attained focus in device production. The detection and th e evaluation of pattern effects is in most cases difficult. Different coatings o n the Si wafers hinder direct measurements and indirect evaluations. Production peoplerecognize pattern effect frequently as a malfunction in temperature contro l. People in process integration can not easily separate the main root cause of broader parameter distribution in electrical parameters in final test due to the overlapping results of CD variations in lithography and those of the microload- ing effects in RTP, CMP and plasma etch processing. In this paper we clarify the versatile realisations of pattern effects in different geometrical fractals and for different coating materials. We describe new methods for easy evaluation of pat-tern effects in production. An inherent solution to eliminate pattern effec ts in dual side heated RTP is to create a (hot) black body cavity at the frontside of the production wafer. This can be achieved by positioning an additional Si wafer (called Hot Shield) near the frontside of the production wafer. This arra ngement allows 150 K/s ramp rate and dramatically reduces intra-die variations c ompared to a process where a wafer is heated without the Hot Shield at the same ramp up rate. The enhanced thermal mass with the Hot Shield results in slightly longer "peak time" for spike annealing. Our modelling results show that the actu al longer peak time can easily be compensated by slightly reduced maximumtempera ture and by changed implant parameters.