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Comparison of MOCVD and MBE regrowth for CAVET fabrication

: Kotzea, Simon; Witte, Wiebke; Godejohann, Birte-Julia; Marx, Mathias; Heuken, Michael; Kalisch, Holger; Aidam, Rolf; Vescan, Andrei

Fulltext urn:nbn:de:0011-n-5406207 (2.4 MByte PDF)
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Created on: 12.4.2019

Electronics. Online journal 8 (2019), No.4, Art. 377, 9 pp.
ISSN: 2079-9292
Journal Article, Electronic Publication
Fraunhofer IAF ()
CAVET; current aperture vertical electron transistor; gallium nitride; vertical power device

In this paper, we demonstrate the fabrication of current aperture vertical electron transistors (CAVET) realized with two different epitaxial growth methods. Templates with a p-GaN current blocking layer (CBL) were deposited by metal organic chemical vapor deposition (MOCVD). Channel and barrier layers were then regrown by either molecular beam epitaxy (MBE) or MOCVD. Scanning electron microscope (SEM) images and atomic force microscope (AFM) height profiles are used to identify the different regrowth mechanisms. We show that an AlN interlayer below the channel layer was able to reduce Mg diffusion during the high temperature MOCVD regrowth process. For the low-temperature MBE regrowth, Mg diffusion was successfully suppressed. CAVET were realized on the various samples. The devices suffer from high leakage currents, thus further regrowth optimization is needed.