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RF-noise model extraction procedure for distributed multiport models

 
: Heinz, Felix; Schwantuschke, Dirk; Ohlrogge, Matthias; Leuther, Arnulf; Ambacher, Oliver

Verband Deutscher Elektrotechniker e.V. -VDE-, Berlin; Institut für Mikrowellen- und Antennentechnik e.V. -IMA-:
German Microwave Conference, GeMiC 2019 : 25-27 March 2019, Stuttgart, Germany
Stuttgart, 2019
ISBN: 978-3-9812668-9-4
pp.260-263
German Microwave Conference (GeMiC) <12, 2019, Stuttgart>
English
Conference Paper
Fraunhofer IAF ()
high electron mobility transistor (HEMT); small signal model; noise model; noise measurement; noise

Abstract
A parameter extraction procedure for noise models in distributed multiport topology is presented. This model topology is able to describe the small-signal behavior of high electron mobility transistors (HEMTs) even in the sub millimeter-wave regime while providing full model-scalability. The method introduces an efficient way to extract both the active, intrinsic transistor parameters and the noise properties for distributed multiport models. A fully scalable small-signal and noise-model of a 50nm metamorphic HEMT technology in the distributed multiport approach is presented.

: http://publica.fraunhofer.de/documents/N-540615.html