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Instabilities by parasitic substrate-loop of GaN-on-Si HEMTs in half-bridges

: Mönch, Stefan; Weiss, Beatrix; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar


Institute of Electrical and Electronics Engineers -IEEE-; IEEE Power Electronics Society; IEEE Electron Devices Society:
6th Annual IEEE Workshop on Wide Bandgap Power Devices & Applications, WiPDA 2018 : Atlanta, Georgia, Oct. 31-Nov. 2, 2018
Piscataway, NJ: IEEE, 2018
ISBN: 978-1-5386-5909-0
ISBN: 978-1-5386-5908-3
ISBN: 978-1-5386-5910-6
Workshop on Wide Bandgap Power Devices and Applications (WiPDA) <6, 2018, Atlanta/Ga.>
Conference Paper
Fraunhofer IAF ()
circuit stability; gallium nitride; substrate potential; semiconductor device packaging; switching circuits; bridge circuit

The stability of GaN-on-Si HEMTs with substrate to- source termination is analyzed in a high-voltage half-bridge. The work exposes that external substrate termination creates a parasitic substrate loop, which leads to unstable switching behavior under certain conditions. Stability analysis reveals that parasitic inductance in the substrate-loop alone is sufficient for instabilities, even with zero parasitic inductance in the gate- and power-loops. A systematic analytical stability analysis is carried out based on a small-signal equivalent circuit. The theory is verified by measurements using a PCB- embedded 600V GaN HEMT with integrated gate driver Adequate damping of the substrate loop resonance enables stable operation of the halfbridge module.