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Edge facet dynamics during the growth of heavily doped n-type silicon by the Czochralski-method

: Stockmeier, Ludwig; Kranert, Christian; Raming, Georg; Miller, Alfred; Reimann, Christian; Rudolph, Peter; Friedrich, Jochen

Preprint urn:nbn:de:0011-n-5374881 (1.3 MByte PDF)
MD5 Fingerprint: 5dc48044c51bf4547dac881ba6851ce4
Created on: 19.3.2019

Journal of Crystal Growth 491 (2018), pp.57-65
ISSN: 0022-0248
European Commission EC
H2020; 662133; PowerBase
Journal Article, Electronic Publication
Fraunhofer IISB ()
constitutional supercooling; dislocation; facet; segregation; Czochralski method; silicon

During the growth of [001]-oriented, heavily n-type doped silicon crystals by the Czochralski (CZ) method dislocation formation occurs frequently which leads to a reduction of the crystal yield. In this publication the evolution of the solid-liquid interface and the formation of the {111} edge facets are analyzed on a microscopic scale as possible reason for dislocation formation in heavily n-type doped [001]-oriented CZ crystals. A correlation between the length of the {111} edge facets and the curvature of the interface is found. They ultimately promote supercooled areas and interrupted growth kinetics, which increase the probability for dislocation formation at the boundary between the {111} edge facets and the atomically rough interface.