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Ultrabroadband terahertz detectors based on CMOS field-effect transistors with integrated antennas

: Ikamas, K.; Cibiraite, Dovile; Bauer, Maris; Lisauskas, Alvydas; Krozer, Viktor; Roskos, Hartmut G.


Institute of Electrical and Electronics Engineers -IEEE-:
IRMMW-THz 2018, 43rd International Conference on Infrared, Millimeter, and Terahertz Waves : 9-14 September 2018, Nagoya Congress Center, Nagoya, Japan
Piscataway, NJ: IEEE, 2018
ISBN: 978-1-5386-3809-5
ISBN: 978-1-5386-3808-8
ISBN: 978-1-5386-3810-1
2 pp.
International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) <43, 2018, Nagoya>
Conference Paper
Fraunhofer ITWM ()

We report on the modeling, implementation and characterization of optimized, ultrabroadband antenna-coupled field-effect transistors for the detection of terahertz (THz) radiation. The detectors were fabricated in 90-nm silicon CMOS technology with integrated bow-tie and log-spiral antennas. We also investigated a third design with a narrowband dipole antenna. In the frequency range from 0.5 to 1.5 THz, the detector with the bow-tie antenna design exhibited a nearly flat frequency response at an optical responsivity of ~100 V/W. We found minimum optical noise equivalent powers (NEPs) as low as 48 pW/√Hz at 0.6 THz and 70 pW/√Hz at 1.5 THz. The dipole-design detector achieved an optical NEP of 17 pW/√Hz at resonance frequency of 490 GHz. Our detectors were optimized with the help of a self-developed circuit model based on device parameters such as transistor geometry, antenna impedance matching and the peculiarities of the employed fabrication technology.