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Broadband terahertz power detectors based on 90-nm silicon CMOS transistors with flat responsivity up to 2.2 THz

: Ikamas, Kestutis; Cibiraite, Dovile; Lisauskas, Alvydas; Bauer, Maris; Krozer, Viktor; Roskos, Hartmut G.

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IEEE Electron Device Letters 39 (2018), No.9, pp.1413-1416
ISSN: 0741-3106
ISSN: 0193-8576
Journal Article, Electronic Publication
Fraunhofer ITWM ()
THz power detector; terahertz detector; submillimeter-wave detector; broadband antenna; field-effect transistor; FET device modeling; rectification

We present broadband high sensitivity terahertz (THz) detectors based on 90 nm CMOS technology with the state-of-the-art performance. The devices are based on bow-tie and log-spiral antenna-coupled field-effect transistors (FETs) for the detection of free-space THz radiation (TeraFETs). We report on optimized performance, which was achieved by employing an in-house developed physics-based model during detector design and thorough device characterization under THz illumination. The implemented detector with bow-tie antenna design exhibits a nearly flat frequency response characteristic up to 2.2 THz with an optical responsivity of 45 mA/W (or 220 V/W). We have determined a minimum optical noise-equivalent power as low as 48 pW/ Hz−−√ at 0.6 THz and 70 pW/ Hz−−√ at 1.5 THz. The results obtained at 1.5 THz are better than the best narrowband TeraFETs reported in the literature at this frequency and only up to a factor of four inferior to the best narrowband devices at 0.6 THz.