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  4. Layer thickness scaling and wake-up effect of pyroelectric response in Si-doped HfO2
 
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2018
Journal Article
Title

Layer thickness scaling and wake-up effect of pyroelectric response in Si-doped HfO2

Abstract
The pyroelectric response of polycrystalline, Si-doped HfO2 layers in a thickness range of 10 nm to 50 nm is investigated employing the temperature oscillation method. The largest value of the pyroelectric coefficient is obtained for the 20 nm layer with p = 84 mC m−2 K−1, which is similar to that of lithium niobate. Furthermore, the pyroelectric coefficient is analyzed with respect to field cycling and is found to increase proportionally with the remanent polarization during wake-up, providing further evidence that the hysteresis of the material is truly ferroelectric. However, for different material thicknesses, the switchable polarization and pyroelectric coefficient are not proportional, indicating that only part of the domains is pyroelectrically active, which suggests potential for further improvement of the pyroelectric response. Due to its CMOS compatibility and conformal deposition using atomic layer deposition (ALD), Si-doped HfO2 is a promising candidate for future energy harvesting and sensor applications.
Author(s)
Mart, Clemens
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
Kämpfe, Thomas  orcid-logo
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
Zybell, Sabine
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
Weinreich, Wenke  
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
Journal
Applied Physics Letters  
DOI
10.1063/1.5019308
Language
English
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
Keyword(s)
  • ferroelectric material

  • energy harvester

  • polycrystalline material

  • pyroelectricity

  • magnetic equipment

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