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Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique

: Kolkovsky, Vladimir; Scholz, Sebastian; Kolkovsky, Valery; Schmidt, Jan-Uwe; Heller, Rene


Journal of vacuum science and technology B. Microelectronics and nanometer structures 36 (2018), No.6, Art. 062901
ISSN: 0734-211X
ISSN: 1071-1023
ISSN: 2166-2746
ISSN: 2166-2754
European Commission EC
H2020; 661796; ADMONT
Advanced Distributed Pilot Line for More-than-Moore Technologies
Journal Article
Fraunhofer IPMS ()

The electrical and structural properties of thin hafnia films grown by the atomic layer deposition technique were investigated before and after different annealing steps as well as after a dc H plasma treatment. By using the nuclear reaction analysis, the authors demonstrated that high concentrations of hydrogen (about 1–2 at. %) could be observed even in as-grown hafnia layers. An additional hydrogenation of the samples with atomic H led to a significant shift of the flatband voltage. This shift could be explained by the introduction of positively charged H-related defects which were found to be stable at room temperature. By comparing the experimental findings with the theory and the data from muon spin spectroscopy, they tentatively ascribed these defects to interstitial H in HfO2.