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  4. Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique
 
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2018
Journal Article
Title

Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique

Abstract
The electrical and structural properties of thin hafnia films grown by the atomic layer deposition technique were investigated before and after different annealing steps as well as after a dc H plasma treatment. By using the nuclear reaction analysis, the authors demonstrated that high concentrations of hydrogen (about 1-2 at. %) could be observed even in as-grown hafnia layers. An additional hydrogenation of the samples with atomic H led to a significant shift of the flatband voltage. This shift could be explained by the introduction of positively charged H-related defects which were found to be stable at room temperature. By comparing the experimental findings with the theory and the data from muon spin spectroscopy, they tentatively ascribed these defects to interstitial H in HfO2.
Author(s)
Kolkovsky, Vladimir
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
Scholz, Sebastian  
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
Kolkovsky, Valery
Technische Universität Dresden, Institut für Angewandte Physik, 01062 Dresden, Germany
Schmidt, Jan-Uwe  
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
Heller, Rene
Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box510119, 01109 Dresden, Germany
Journal
Journal of vacuum science and technology B. Microelectronics and nanometer structures  
Project(s)
ADMONT  
Funder
European Commission EC  
DOI
10.1116/1.5045634
Language
English
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
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