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Polythiophenes as emitter layers for crystalline silicon solar cells: Parasitic absorption, interface passivation, and open circuit voltage

: Zellmeier, M.; Brenner, T.J.K.; Janietz, S.; Nickel, N.H.; Rappich, J.


Journal of applied physics 123 (2018), No.3, Art. 033102, 6 pp.
ISSN: 0021-8979
ISSN: 1089-7550
Journal Article
Fraunhofer IAP ()

We investigated the influence of the emitter (amorphous-Si, a-Si, or polythiophene derivatives: poly(3-hexylthiophene), P3HT, and poly(3-[3,6-dioxaheptyl]-thiophene), P3DOT) and the interface passivation (intrinsic a-Si or SiOX and methyl groups or SiOX) on the c-Si based 1 × 1 cm2 planar hybrid heterojunction solar cell parameters. We observed higher short circuit currents for the P3HT or P3DOT/c-Si solar cells than those obtained for a-Si/c-Si devices, independent of the interface passivation. The obtained VOC of 659 mV for the P3DOT/SiOX/c-Si heterojunction solar cell with hydrophilic 3,6-dioxaheptyl side chains is among the highest reported for c-Si/polythiophene devices. The maximum power conversion efficiency, PCE, was 11% for the P3DOT/SiOX/c-Si heterojunction solar cell. Additionally, our wafer lifetime measurements reveal a field effect passivation in the wafer induced by the polythiophenes when deposited on c-Si.