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Towards 90% Bifaciality for p-Type Cz-Si Solar Cells by Adaption of Industrial PERC Processes

: Lohmüller, E.; Lohmüller, S.; Norouzi, M.H.; Saint-Cast, P.; Weber, J.; Meier, S.; Wolf, A.


Institute of Electrical and Electronics Engineers -IEEE-:
IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 : A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC, 10-15 June 2018, Waikoloa Village, HI, USA
Piscataway, NJ: IEEE, 2018
ISBN: 978-1-5386-8529-7
ISBN: 978-1-5386-8530-3
World Conference on Photovoltaic Energy Conversion (WCPEC) <7, 2018, Waikoloa/Hawaii>
Photovoltaic Specialists Conference (PVSC) <45, 2018, Waikoloa/Hawaii>
Photovoltaic Science and Engineering Conference (PVSEC) <28, 2018, Waikoloa/Hawaii>
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <34, 2018, Waikoloa/Hawaii>
Conference Paper
Fraunhofer ISE ()
Photovoltaik; Silicium-Photovoltaik; Dotierung; Diffusion; Oberflächen-Konditionierung; Passivierung; Lichteinfang; Kontaktierung; Strukturierung; Pilotherstellung von industrienahen Solarzellen; bifaciality; p-type silicon solar cell; biPERC; biPERL; PERC

We demonstrate a bifaciality of 88.0% for 6-inch bifacial p-type Cz-Si passivated emitter and rear cells (biPERC) and increase their rear side energy conversion efficiency to 18.0% by minor adaptions in the fabrication sequence. We utilize the “pPassDop” concept on the cells' rear side that applies an aluminum oxide and a boron-doped silicon nitride (SiN X :B layer stack for simultaneous passivation and doping source. Laser doping forms the local p-doped back surface field regions for these biPERL solar cells. Screen-printed silver-aluminum metallization contacts these regions. We also demonstrate the compatibility of the laser doping approach with conventional (undoped) SiN X capping layer to fabricate biPERL devices with screen-printed contacts.