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Large Area TOPCon Technology Achieving 23.4% Efficiency

: Steinhauser, B.; Feldmann, F.; Polzin, J.-I.; Tutsch, L.; Arya, V.; Grübel, B.; Fischer, A.; Moldovan, A.; Benick, J.; Richter, A.; Brand, A.A.; Kluska, S.; Hermle, M.


Institute of Electrical and Electronics Engineers -IEEE-:
IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 : A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC, 10-15 June 2018, Waikoloa Village, HI, USA
Piscataway, NJ: IEEE, 2018
ISBN: 978-1-5386-8529-7
ISBN: 978-1-5386-8530-3
World Conference on Photovoltaic Energy Conversion (WCPEC) <7, 2018, Waikoloa/Hawaii>
Photovoltaic Specialists Conference (PVSC) <45, 2018, Waikoloa/Hawaii>
Photovoltaic Science and Engineering Conference (PVSEC) <28, 2018, Waikoloa/Hawaii>
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <34, 2018, Waikoloa/Hawaii>
Conference Paper
Fraunhofer ISE ()
Photovoltaik; Silicium-Photovoltaik; Oberflächen-Konditionierung; Passivierung; Lichteinfang; Kontaktierung; Strukturierung; Herstellung; Analyse; Hocheffiziente Solarzelle; plating; contacts

We report on the development of the TOPCon technology on large area focusing on the deposition technology for the a-SiC x (n) layer and the rear side metallization. We demonstrate that kHz direct-plasma technology can be used to deposit the a-SiC x (n) layers and that concerns about ion bombardment damaging the thin SiO x are not justified. Excellent surface passivation quality was achieved with lifetimes up to 13 ms (1 Ωcm n-type). The layers can be contacted using ITO reaching specific contact resistivities in the range of 5 mΩcm 2 . Solar cells with a boron diffused emitter and TOPCon rear are presented resulting in an efficiency of 23.4 % with laser contact opening and NiCuAg plating.