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Suns-ILIT: Accurate method for non-contacted local IV measurements

: Kwapil, W.; Wasmer, S.; Fell, A.; Greulich, J.M.; Schubert, M.C.


Ballif, C. ; American Institute of Physics -AIP-, New York:
SiliconPV 2018, 8th International Conference on Crystalline Silicon Photovoltaics : 19-21 March 2018, Lausanne, Switzerland
Woodbury, N.Y.: AIP, 2018 (AIP Conference Proceedings 1999)
ISBN: 978-0-7354-1715-1
Art. 020015, 5 pp.
International Conference on Crystalline Silicon Photovoltaics (SiliconPV) <8, 2018, Lausanne>
Conference Paper
Fraunhofer ISE ()
Photovoltaik; Silicium-Photovoltaik; Charakterisierung von Prozess- und Silicium-Materialien; Messtechnik und Produktionskontrolle

We demonstrate a novel method to measure the lateral distribution of the recombination current without an external load, hence without the need to establish an electrical contact. In combination with photoluminescence imaging, which can be used to calculate the lateral implied open-circuit voltage iVOC distribution, accurate local current-voltage IV characteristics similar to global Suns-VOC curves are obtained based on measurements with varying illumination intensity. This method can also be used on unfinished, non-metallized cell precursors. In addition to its value for assessing limitations in standard solar cells, it has the potential to be very useful for the analysis of the IV characteristics of individual sub-cells in tandem devices by using different excitation wavelengths.