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Temperature dependent imaging of solar cell losses

: Eberle, R.; Kwapil, W.; Schubert, M.C.


Ballif, C. ; American Institute of Physics -AIP-, New York:
SiliconPV 2018, 8th International Conference on Crystalline Silicon Photovoltaics : 19-21 March 2018, Lausanne, Switzerland
Woodbury, N.Y.: AIP, 2018 (AIP Conference Proceedings 1999)
ISBN: 978-0-7354-1715-1
Art. 020005, 7 pp.
International Conference on Crystalline Silicon Photovoltaics (SiliconPV) <8, 2018, Lausanne>
Conference Paper
Fraunhofer ISE ()
Photovoltaik; Silicium-Photovoltaik; Charakterisierung von Prozess- und Silicium-Materialien

GLOBAL cell efficiencies are measured at standardized testing conditions (STC) to be able to compare technology improvements worldwide in a systematic manner. However, these STC are rarely met in real operation conditions of solar cells as especially temperature and irradiation intensity differ a lot to laboratory standards. In this study we present an approach to characterize the temperature-dependent behavior of solar cells with spatial resolution. Therefore, techniques for imaging of series resistance, short-circuit current and a Local IV analysis are performed at different temperatures. At each of these a cell analysis is conducted to evaluate the cell’s efficiency and its losses as well as to calculate temperature coefficients of cell parameters. Especially due the spatial resolution, information about the influence of different cell areas on the cell’s performance at varying temperatures can be gained as a valuable basis for further cell improvements. Good agreement of temperature coefficients calculated from global measurements and averaged from maps of fitted values assuming a linear behavior with temperature show the applicability of our approach which enables efficiency optimizations of silicon solar cells for non-ideal operation conditions.