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The GaN trench gate MOSFET with floating islands

High breakdown voltage and improved BFOM
: Shen, L.; Müller, S.; Cheng, X.; Zhang, D.; Zheng, L.; Xu, D.; Yu, Y.; Meissner, E.; Erlbacher, T.


Superlattices and Microstructures 114 (2018), pp.200-206
ISSN: 0749-6036
ISSN: 1096-3677
Journal Article
Fraunhofer IISB ()

A novel GaN trench gate (TG) MOSFET with P-type floating islands (FLI) in drift region, which can suppress the electric field peak at bottom of gate trench during the blocking state and prevent premature breakdown in gate oxide, is proposed and investigated by TCAD simulations. The influence of thickness, position, doping concentration and length of the FLI on breakdown voltage (BV) and specific on-resistance (Ron sp) is studied, providing useful guidelines for design of this new type of device. Using optimized parameters for the FLI, GaN FLI TG-MOSFET obtains a BV as high as 2464 V with a Ron sp of 3.0 mΩ cm2. Compared to the conventional GaN TG-MOSFET with the same structure parameters, the Baliga figure of merit (BFOM) is enhanced by 150%, getting closer to theoretical limit for GaN devices.