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0.5-Gb/s OFDM-Based Laser Data and Power Transfer Using a GaAs Photovoltaic Cell

: Fakidis, J.; Videv, S.; Helmers, H.; Haas, H.


IEEE Photonics Technology Letters 30 (2018), No.9, pp.841-844
ISSN: 1041-1135
Journal Article
Fraunhofer ISE ()
Materialien - Solarzellen und Technologie; Photovoltaik; III-V und Konzentrator-Photovoltaik; III-V Epitaxie und Solarzellen; Power-by-Light; harvesting; arsenide; OFDM; cavity surface emitting lasers

In this letter, we demonstrate for the first time the additional capability of high-speed data communication for single-junction photovoltaic (PV) cells. A record 3-dB bandwidth of 24.5 MHz is reported for a gallium arsenide (GaAs) PV cell. The PV cell is shown to achieve a power efficiency of at least 42% when irradiance of 0.46 W/cm2 is received from 847-nm vertical-cavity surface-emitted laser. Optimized bit-and-power-loaded optical orthogonal frequency-division multiplexing (OFDM) is applied to use the communication bandwidth most efficiently. With this, a data rate of 0.5 Gb/s is achieved for a 2-m OFDM-based laser link. To the best of our knowledge, the reported data rates achieved with a GaAs PV cell as the detector are the highest for simultaneous optical wireless information and power transfer.