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Electromagnetic Functionalization of Wide‐Bandgap Dielectric Oxides by Boron Interstitial Doping

: Park, D.-S.; Rees, G.J.; Wang, H.; Rata, D.; Morris, A.J.; Maznichenko, I.V.; Ostanin, S.; Bhatnagar, A.; Choi, C.-J.; Jónsson, R.D.B.; Kaufmann, K.; Kashtiban, R.; Walker, M.; Chiang, C.-T.; Thorsteinsson, E.B.; Luo, Z.; Park, I.-S.; Hanna, J.V.; Mertig, I.; Dörr, K.; Gíslason, H.P.; McConville, C.F.


Advanced Materials 30 (2018), No.39, Art.1802025, 9 pp.
ISSN: 0935-9648
ISSN: 1521-4095
Journal Article
Fraunhofer CSP ()

A surge in interest of oxide‐based materials is testimony for their potential utility in a wide array of device applications and offers a fascinating landscape for tuning the functional properties through a variety of physical and chemical parameters. In particular, selective electronic/defect doping has been demonstrated to be vital in tailoring novel functionalities, not existing in the bulk host oxides. Here, an extraordinary interstitial doping effect is demonstrated centered around a light element, boron (B). The host matrix is a novel composite system, made from discrete bulk LaAlO3:LaBO3 compounds. The findings show a spontaneous ordering of the interstitial B cations within the host LaAlO3 lattices, and subsequent spin‐polarized charge injection into the neighboring cations. This leads to a series of remarkable cation‐dominated electrical switching and high‐temperature ferromagnetism. Hence, the induced interstitial doping serves to transform a nonmagnetic insulating bulk oxide into a ferromagnetic ionic–electronic conductor. This unique interstitial B doping effect upon its control is proposed to be as a general route for extracting/modifying multifunctional properties in bulk oxides utilized in energy and spin‐based applications.