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A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond

: Dünkel, S.; Trentzsch, M.; Richter, R.; Moll, P.; Fuchs, C.; Gehring, O.; Majer, M.; Wittek, S.; Müller, B.; Melde, T.; Mulaosmanovic, H.; Slesazeck, S.; Müller, S.; Ocker, J.; Noack, M.; Löhr, D.-A.; Polakowski, P.; Müller, J.; Mikolajick, T.; Höntschel, J.; Rice, B.; Pellerin, J.; Beyer, S.


Institute of Electrical and Electronics Engineers -IEEE-:
International Electron Devices Meeting, IEDM 2017. Technical digest : 2-6 December 2017, San Francisco, CA, USA
Piscataway, NJ: IEEE, 2018
ISBN: 978-1-5386-3559-9
ISBN: 978-1-5386-3558-2
ISBN: 978-1-5386-3560-5
International Electron Devices Meeting (IEDM) <63, 2017, San Francisco/Calif.>
Conference Paper
Fraunhofer IPMS ()

We show the implementation of a ferroelectric field effect transistor (FeFET) based eNVM solution into a leading edge 22nm FDSOI CMOS technology. Memory windows of 1.5 V are demonstrated in aggressively scaled FeFET cells with an area as small as 0.025 μm 2 At this point program/erase endurance cycles up to 10 5 are supported. Complex pattern are written into 32 MBit arrays using ultrafast program/erase pulses in a 10 ns range at 4.2 V. High temperature retention up to 300 °C is achieved. It makes FeFET based eNVM a viable choice for overall low-cost and low-power IoT applications in 22nm and beyond technology nodes.