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Investigations of copper wire bonding capability on plasma based additive copper metallizations

: Hensel, A.; Kohlmann von Platen, K.; Franke, J.


Institute of Electrical and Electronics Engineers -IEEE-:
IEEE 19th Electronics Packaging Technology Conference, EPTC 2017 : 6-9 December 2017, Singapore
Piscataway, NJ: IEEE, 2018
ISBN: 978-1-5386-3042-6
ISBN: 978-1-5386-3041-9
ISBN: 978-1-5386-3043-3
Electronics Packaging Technology Conference (EPTC) <19, 2017, Singapore>
Conference Paper
Fraunhofer ISIT ()

This paper describes and discusses a novel manufacturing process that enables an advanced top-level interconnection for power electronic applications. The commonly used aluminum bond wire process, where a friction welded connection is performed by the usage of ultrasonic on the substrate as well as on the semiconductor, is replaced by copper as a wire material. Thus, the overall performance of power electronic modules can be increased significantly because of the preeminent material characteristics of copper [1]. However, the higher hardness and lower ductility of copper in comparison to aluminum presuppose a functional coating on the silicon layers that absorbs the high bonding forces and protects the crystal structures from shattering. Different approaches for a selective copper metallization like galvanic metallization have been investigated and provide usable coating quality. Disadvantageously the processes are neither very flexible nor cost-effective and have also a bad environmental impact. The technology described in the following uses a current stabilized argon plasma to melt single copper particles which are then accelerated towards the substrate. Upon impact, the coating material solidifies and creates a diffusion-based adhesive layer on which the copper bonding process can be performed.