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Aspects of rf-heating and gas-phase doping of large scale silicon crystals grown by the Float Zone technique

: Zobel, F.; Mosel, F.; Sorensen, J.; Dold, P.

Fulltext ()

Jakovičs, A.:
VIII International Scientific Colloquium on Modelling for Materials Processing 2017 : 21-22 September 2017, Riga, Latvia
Bristol: IOP Publishing, 2018 (IOP conference series. Materials science and engineering 355)
ISBN: 978-1-5108-6285-2
Art. 012006, 7 pp.
International Scientific Colloquium Modelling for Materials Processing (MMP) <8, 2017, Riga>
Conference Paper, Electronic Publication
Fraunhofer CSP ()

Float Zone growth of silicon crystals is known as the method for providing excellent material properties. Basic principle of this technique is the radiofrequency induction heating, main aspects of this method will be discussed in this article. In contrast to other methods, one of the advantages of the Float Zone technique is the possibility for in-situ doping via gas phase. Experimental results on this topic will be shown and discussed.