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X-band GaN high power amplifier with integrated power switch for airborne applications

 
: Pereira, A.; Al-Sarawi, S.; Weste, N.; Abbott, D.; Kuhn, J.; Carrubba, V.; Quay, R.

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Institute of Electrical and Electronics Engineers -IEEE-:
IEEE Radar Conference 2018, RadarConf 2018 : 23-27 April 2018, Oklahoma City, USA
Piscataway, NJ: IEEE, 2018
ISBN: 978-1-5386-4168-2 (print)
ISBN: 978-1-5386-4167-5 (electronic)
ISBN: 978-1-5386-4165-1 (CD-ROM)
ISBN: 978-1-5386-4166-8 (USB)
pp.1106-1110
Radar Conference (RadarConf) <2018, Oklahoma City/Okla.>
English
Conference Paper
Fraunhofer IAF ()

Abstract
This paper reports an X-Band High Power Amplifier (HPA) integrated with a power switch demonstrated for the first time in a 0.25 μm GaN process. The power switch and its drivers are implemented in a synchronous buck converter topology with off-chip filters to modulate the drain supply. The designed supply modulator is then combined with X-band GaN HPA on the same die and the integrated system is experimentally measured as a function of power and frequency. The measured PAE of the combined HPA and supply modulator is 26.8% at a drain voltage of 20 V while delivering maximum output power 35 dBm.

: http://publica.fraunhofer.de/documents/N-520325.html