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Monolithically Integrated THz Transceiver for 1550 nm Excitation

: Kohlhaas, R.B.; Nellen, S.; Liebermeister, L.; Breuer, S.; Globisch, B.


Optical Society of America -OSA-, Washington/D.C.:
CLEO: Science and Innovations : Part of CLEO 2018; 13-18 May 2018, San Jose, California, United States
Washington, DC: OSA, 2018
ISBN: 978-1-943580-42-2
Paper STu3D.5
Conference on Lasers and Electro-Optics - Science and Innovations (CLEO S&I) <2018, San Jose/Calif.>
Conference Paper
Fraunhofer HHI ()

We present a monolithically integrated transceiver for terahertz time-domain spectroscopy in reflection geometry. The transceiver is made of MBE grown, Fe doped InGaAs and combines THz emitter and receiver on a single photoconductive chip. With a peak signal-to-noise ratio of 70 dB, a maximum spectral bandwidth of 5 THz and an emitted THz power of 27 µW, the transceiver is a competitive alternative to individual THz emitter and receiver devices. Since the transceiver can be integrated into a fiber-coupled, cylindrical module with a diameter of 25 mm, this device can be used as a compact THz reflection head.