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Bifacial shingle solar cells on p-type Cz-Si (pSPEER)

: Baliozian, P.; Lohmüller, E.; Fellmeth, T.; Wöhrle, N.; Krieg, A.; Preu, R.


Ballif, C. ; American Institute of Physics -AIP-, New York:
SiliconPV 2018, 8th International Conference on Crystalline Silicon Photovoltaics : 19-21 March 2018, Lausanne, Switzerland
Woodbury, N.Y.: AIP, 2018 (AIP Conference Proceedings 1999)
ISBN: 978-0-7354-1715-1
International Conference on Crystalline Silicon Photovoltaics (SiliconPV) <8, 2018, Lausanne>
Conference Paper
Fraunhofer ISE ()

The concepts of bifaciality and shingling interconnection allow for a boost in output power density pout for silicon-based photovoltaic modules. This work examines silicon-based, bifacial shingle solar cells called “p-type shingled passivated edge, emitter, and rear (pSPEER)”. A specially designed shingle metallization layout on industrial 6-inch p-type Czochralski-grown silicon precursors is contact fired to obtain the host wafer. Six pSPEER cells each of an area of 23 mm x 148 mm are obtained by a newly integrated thermal laser separation step, leaving a very smooth edge for the singulated pSPEER cells. The peak front side output power density is pout,f = 20.8 mW/cm2 (equivalent to a peak energy conversion efficiency η = 20.8% under standard test conditions). A total output power density pout = 21.9 mW/cm2 is attained by assuming an additional rear irradiance of 100 W/m2.