Bifacial shingle solar cells on p-type Cz-Si (pSPEER)

The concepts of bifaciality and shingling interconnection allow for a boost in output power density pout for silicon-based photovoltaic modules. This work examines silicon-based, bifacial shingle solar cells called ""p-type shingled passivated edge, emitter, and rear (pSPEER)"". A specially designed shingle metallization layout on industrial 6-inch p-type Czochralski-grown silicon precursors is contact fired to obtain the host wafer. Six pSPEER cells each of an area of 23 mm x 148 mm are obtained by a newly integrated thermal laser separation step, leaving a very smooth edge for the singulated pSPEER cells. The peak front side output power density is pout,f = 20.8 mW/cm2 (equivalent to a peak energy conversion efficiency i = 20.8% under standard test conditions). A total output power density pout = 21.9 mW/cm2 is attained by assuming an additional rear irradiance of 100 W/m2.