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Development and characterization of multifunctional PECVD SiNX:P layers for laser-doped selective emitters

: Norouzi, M.H.; Saint-Cast, P.; Lohmüller, E.; Weber, J.; Gutscher, S.; Bartsch, J.; Kluska, S.; Steinhauser, B.; Lohmüller, S.; Bitnar, B.; Neuhaus, D.-H.; Palinginis, P.; Benick, J.; Hofmann, M.; Wolf, A.


Ballif, C. ; American Institute of Physics -AIP-, New York:
SiliconPV 2018, 8th International Conference on Crystalline Silicon Photovoltaics : 19-21 March 2018, Lausanne, Switzerland
Woodbury, N.Y.: AIP, 2018 (AIP Conference Proceedings 1999)
ISBN: 978-0-7354-1715-1
International Conference on Crystalline Silicon Photovoltaics (SiliconPV) <8, 2018, Lausanne>
Conference Paper
Fraunhofer ISE ()

We apply stacks of silicon nitride (SiNX) layers consisting of phosphorus-doped SiNX (SiNX:P) and undoped SiNX as first and second layer, on the front surface of p-type monocrystalline silicon passivated emitter and rear cells (PERC). The stack is deposited using plasma-enhanced chemical vapor deposition. These layer stacks provide excellent surface passivation and anti-reflection properties comparable to single undoped SiNX layers. A laser processing locally introduces the phosphorus dopants from the SiNX:P/SiNX layer stack into the silicon and locally removes the layer stack. Thereby, local highly doped areas with sheet resistances as low as Rsh ≈ 20 Ω/sq are obtained. We refer to this as the nPassDop approach, which provides local high doping and structuring of the anti-reflection coating in one process. The saturation current density of the laser processed areas is estimated to be as low as j0,laser ≈ 500 fA/cm2. First implementations for large-area p-type Cz-Si PERC cells with self-aligned NiCuAg plated front contacts yield an energy conversion efficiency of 19.6%.